2SK2018-01S

High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Forward Transconductance
Avalanche Proof

The 2SK2018-01S is FAP-III series.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).

Features of the 2SK2018-01S are:(1)high current; (2)low on-resistance; (3)no secondary breakdown; (4)low driving power; (5)high forward transconductance; (6)avalanche proof.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

The absolute maximum ratings of the 2SK2018-01S can be summarized as:(1)storage temperature:-55 to 150;(2)drain-source voltage:60V;(3)gate-source voltage:±20V;(4)operating temperature:150;(5)pulsed drain current:40A;(6)power dissipation:20W.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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