Features: · High breakdown voltage : VDSS = 180V· High forward transfer admittance : |Yfs| = 0.7 S (typ.)· Complementary to 2SJ313Specifications Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ...
2SK2013: Features: · High breakdown voltage : VDSS = 180V· High forward transfer admittance : |Yfs| = 0.7 S (typ.)· Complementary to 2SJ313Specifications Characteristics S...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Characteristics | Symbol | Rating | Unit |
Drain−source voltage | VDSS | 180 | V |
Gate−source voltage | VGSS | ±20 | V |
Drain current (Note 1) | ID | 1 | A |
Drain power dissipation (Tc = 25) | PD | 25 | W |
Channel temperature | Tch | 150 | |
Storage temperature range | Tstg | −55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).