2SK2013

Features: ·􀁺 High breakdown voltage : VDSS = 180V·􀁺 High forward transfer admittance : |Yfs| = 0.7 S (typ.)·􀁺 Complementary to 2SJ313Specifications Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ...

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SeekIC No. : 004225853 Detail

2SK2013: Features: ·􀁺 High breakdown voltage : VDSS = 180V·􀁺 High forward transfer admittance : |Yfs| = 0.7 S (typ.)·􀁺 Complementary to 2SJ313Specifications Characteristics S...

floor Price/Ceiling Price

Part Number:
2SK2013
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·􀁺 High breakdown voltage : VDSS = 180V
·􀁺 High forward transfer admittance : |Yfs| = 0.7 S (typ.)
·􀁺 Complementary to 2SJ313



Specifications

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 180 V
Gate−source voltage VGSS ±20 V
Drain current (Note 1) ID 1 A
Drain power dissipation (Tc = 25) PD 25 W
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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