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2SK2009

Features: • High input impedance.• Low gate threshold voltage: Vth = 0.5~1.5 V• Excellent switching times: ton = 0.06 s (typ.) toff = 0.12 s (typ.)• Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)• Small package.• Enhancement-modePinoutSpecificatio...

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2SK2009: Features: • High input impedance.• Low gate threshold voltage: Vth = 0.5~1.5 V• Excellent switching times: ton = 0.06 s (typ.) toff = 0.12 s (typ.)• Low drain-source ON resis...

2SK2009 Data Sheet

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Part Number:
2SK2009
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High input impedance.
• Low gate threshold voltage: Vth = 0.5~1.5 V
• Excellent switching times: ton = 0.06 s (typ.) toff = 0.12 s (typ.)
• Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
• Small package.
• Enhancement-mode


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGSS
±20
V
DC Drain Current
ID
200
mA
Drain power dissipation
PD
200
mW
Channel temperature
Tch
150
Storage temperature range
TJ, TSTG
-55~150

Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
         the significant change in temperature, etc.) may cause this product to decrease in the reliability
         significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
         the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
         Toshiba  Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) 
         and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note:This transistor is an electrostatic-sensitive device. Handle with care.




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