2SK1990

The 2SK1990 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS = 1.4 (VGS = 10V, ID = 2.5A); (2)low Ciss = 610 pF TYP; (3)Built-in G-S gate protection diode; (4)high avalanche capability ratings.

What comes next is the maximum ratings of 2SK1990: (1)drain to source voltage: 450V; (2)gate to source voltage: ±30V; (3)drain current(DC): ±4.5A; (4)drain current(pulse): ±18A; (5)total power dissipation(Tc = 25): 30W; (6)channel temperature: 150; (7)storge temperature: -55 to +150; (8)single avalanche current: 6.75A; (9)single avalanche energy: 170.8mJ.

The following is the electrical characteristics of 2SK1990: (1)drain to source on-state resistance: 1.1 typical and 1.4 max at VGS=10V,ID=2.5A; (2)gate to source cutoff voltage: 2.5V min and 3.5V max at VDS=10V, ID=1mA; (3)forward transfer admittance: 1.5S min at VDS=10V, ID=2.5A; (4)drain leakage current: 100A max at VDS=450V, VGS=0; (5)gate to source leakage current: ±10A max at VGS=±20V, VDS=0; (6)input capacitance: 610pF typical at VDS=10V, VGS=0, f=1MHz; (7)output capacitance: 200pF typical at VDS=10V, VGS1=0, f=1MHz; (8)reverse transfer capacitance: 80pF typical at VDS=10V, VGS=0, f=1MHz. There is not much information about the 2SK1990, if you want to get more information, please pay attention to our website and we will update it in time.