2SK1988

The 2SK1988 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS = 5.0 max (VGS = 10V, ID = 1.5A); (2)low Ciss = 350 pF TYP; (3)Built-in G-S gate protection diode; (4)high avalanche capability ratings.

What comes next is the maximum ratings of 2SK1988: (1)drain to source voltage: 450V; (2)gate to source voltage: ±30V; (3)drain current(DC): ±2.5; (4)drain current(pulse): ±10A; (5)total power dissipation(Tc = 25): 30W; (6)channel temperature: 150; (7)storge temperature: -55 to +150; (8)single avalanche current: 3.75A; (9)single avalanche energy: 73.8mJ.

The following is the electrical characteristics of 2SK1988: (1)drain to source on-state resistance: 2.2 typical and 2.8 max at VGS=10V,ID=1.5A; (2)gate to source cutoff voltage: 2.5V min and 3.5V max at VDS=10V, ID=1mA; (3)forward transfer admittance: 0.9S min at VDS=20V, ID=1.5A; (4)drain leakage current: 100A max at VDS=450V, ID=0; (5)gate to source leakage current: ±30A max at VGS=±25V, VDS=0; (6)input capacitance: 350pF typical at VDS=10V, VGS=0, f=1MHz; (7)output capacitance: 120pF typical at VDS=10V, VGS=0, f=1MHz; (8)reverse transfer capacitance: 45pF typical at VDS=10V, VGS=0, f=1MHz. There is not much information about the 2SK1988, if you want to get more information, please pay attention to our website and we will update it in time.