2SK1985-01MR

The 2SK1985-01MR is an n-channel silicon power mos-fet.Features of the 2SK1985-01MR are :(1)high speed switching; (2)low on-resistance; (3)no secondary breakdown; (4)low driving power; (5)high voltage; (6)VGS=±30V guarantee; (7)avalanche-proof.

The absolute maximum ratings of the 2SK1985-01MR can be summarized as:(1)drain-source voltage:900V; (2)drain-gate voltage(RGS=20K):900V; (3)continous drain current:5A; (4)pulsed drain current:20A; (5)gate-source voltage:±30V; (6)Max.power dissipation:50W; (7)operating and storage temperature range:Tch:150;Tstg:-55~150.

The electrical characteristics(Ta=25) of the 2SK1985-01MR can be summarized as:(1)drain-source breakdown voltage:900V; (2)gate threshold voltage:2.5~3.5V; (3)zero gate voltage drain current:500A(Tch=25);1.0mA(Tch=125); (4)gate-source leakage current:100nA; (5)drain-source on-state resistance:2.8; (6)porward transconductance:2S; (7)input capacitance:1950pF; (8)output capacitance:150pF; (9)reverse transfer capacitance:55pF.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .