Features: • Gate can be driven by 1.5 V• Low ON resistance R DS(on) = 0.8 W MAX. @ VGS = 1.5 V, ID = 0.1 A R DS(on) = 0.2 W MAX. @ VGS = 4.0 V, ID = 1.5 ASpecifications Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS VGS = 0 16 V ...
2SK1960: Features: • Gate can be driven by 1.5 V• Low ON resistance R DS(on) = 0.8 W MAX. @ VGS = 1.5 V, ID = 0.1 A R DS(on) = 0.2 W MAX. @ VGS = 4.0 V, ID = 1.5 ASpecifications Parameter ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-to-Source Voltage |
VDSS |
VGS = 0 |
16 |
V |
Gate-to-Source Voltage |
VGSS |
VDS = 0 |
±7.0 |
V |
Drain Current (DC) |
ID |
±3.0 |
A | |
Drain Current (pulse) |
IDP |
PW10s, duty cycle50% |
±6.0 |
A |
Total Power Dissipation |
PT |
16 cm2x0.7 mm ceramic substrate used |
2.0 |
W |
Channel Temperature |
Tch |
150 |
||
Storage temperature |
Tstg |
55 to +150 |