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2SK1959

Features: • Gate can be driven by 1.5 V• Low ON resistance R DS(on) = 3.2 W MAX. @ VGS = 1.5 V, ID = 50 mA R DS(on) = 0.5 W MAX. @ VGS = 4.0 V, ID = 1.0 ASpecifications Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS VGS = 0 16 V ...

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SeekIC No. : 004225825 Detail

2SK1959: Features: • Gate can be driven by 1.5 V• Low ON resistance R DS(on) = 3.2 W MAX. @ VGS = 1.5 V, ID = 50 mA R DS(on) = 0.5 W MAX. @ VGS = 4.0 V, ID = 1.0 ASpecifications Parameter ...

2SK1959 Data Sheet

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Part Number:
2SK1959
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Gate can be driven by 1.5 V
• Low ON resistance
    R DS(on) = 3.2 W MAX. @ VGS = 1.5 V, ID = 50 mA
    R DS(on) = 0.5 W MAX. @ VGS = 4.0 V, ID = 1.0 A


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
VGS = 0
16
V
Gate-to-Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
ID
±2.0
A
Drain Current (pulse)
IDP
PW10s, duty cycle50%
±4.0
A
Total Power Dissipation
PT
16 cm2x0.7 mm ceramic substrate used
2.0
W
Channel Temperature
Tch
150
Storage temperature
Tstg
55 to +150



Description

The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video camera


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