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2SK1958

Features: • Gate can be driven by 1.5 V• Because of its high input impedance, there's no need to consider drive current• Since bias resistance can be omitted, the number of components required can be reducedSpecifications Parameter Symbol Conditions Ratings Uni...

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SeekIC No. : 004225824 Detail

2SK1958: Features: • Gate can be driven by 1.5 V• Because of its high input impedance, there's no need to consider drive current• Since bias resistance can be omitted, the number of compone...

2SK1958 Data Sheet

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Part Number:
2SK1958
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Gate can be driven by 1.5 V
• Because of its high input impedance, there's no need to consider drive current
• Since bias resistance can be omitted, the number of components required can be reduced


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
VGS = 0
16
V
Gate-to-Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
ID
±0.1
A
Drain Current (pulse)
IDP
PW10s, duty cycle50%
±0.2
A
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
Storage temperature
Tstg
55 to +150



Description

The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.


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