2SK1917-MR

2SK1917-MR is a kind of N-Channel silicon power MOS-FET. The typical applications include switching regulators, UPS, DC-DC converters and general purpose power amplifiers. There are some features as follows. First is high speed switching. The second is low on-resistance. Then is no secondary breakdown. Next is low driving power. The fifth is high voltage. The last one is VGS=±30 V guarantee.

What comes next is the absolute maximum ratings of 2SK1917-MR(TC=25). The VDS (drain-source voltage) is 250 V. The VDGR (drain-gate voltage) is 250 V at RGS=20 K.The ID (continuous drain current) is 10 A. The ID(puls) (pulsed drain current) is 28 A. The VGS (gate-source voltage) is ±30 V. The PD (power dissipation) is 50 W. The Tch (channel temperature) is 150. The Tstg (storage temperature) is from -55 to +150.

The following is the electrical characteristics of 2SK1917-MR(TC=25 unless otherwise specified). The minimum V(BR)DSS (drain-to-source breakdown voltage) is 250 V at VGS=0 V, ID=1 mA. The typical RDS(on) (drain-to-source on-resistance) is 0.3 and the maximum is 0.4 at VGS=10 V, ID=5 A. The minimum VGS(th) (gate threshold voltage) is 2.5 V, the typical is 3.5 V and the maximum is 5.0 V at VDS=VGS, ID=1 mA. The minimum gfs (forward transconductance) is 2.0 S and the typical is 4.5 S when VDS=25 V, ID=5 A.