2SK1916-01R

The 2SK1916-01R is designed as N-channel silicon power MOSFET. Typical applications include switching regulators, UPS, DC-DC converters and general purpose power amplifier.

2SK1916-01R has seven features. (1)High speed switching. (2)Low on-resistance. (3)No secondary breakdown. (4)Low driving power. (5)High voltage. (6)Vgs=+/-30V guarantee. (7)Avalanche proof. Those are all the main features.

Some absolute maximum ratings of 2SK1916-01R have been concluded into several points as follow. (1)Its drain source voltage would be 450V. (2)Its drain gate voltage would be 450V. (3)Its continuous drain current would be 18A. (4)Its pulsed drain current would be 44A. (5)Its gate to source voltage would be +/-30V. (6)Its maximum power dissipation would be 80W. (7)Its operating and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK1916-01R are concluded as follow. (1)Its drain to source breakdown voltage would be min 450V. (2)Its gate threshold voltage would be min 2.5V and typ 3.5V and max 5.0V. (3)Its zero gate voltage drain current would be typ 10uA and max 500uA at Tch=25°C and it would be typ 0.2mA and max 1.0mA at Tch=125°C. (4)Its drain source on-state resistance would be typ 0.3ohms and max 0.45ohms. (5)Its input capacitance would be typ 1800pF and max 2700pF. (6)Its output capacitance would be typ 270pF and max 410pF. (7)Its reverse transfer capacitance would be typ 120pF and max 185pF. (8)Its turn-on time ton would be typ 70ns and max 110ns for td(on) and would be typ 100ns and max 150ns for tr. (9)Its turn-off time would be typ 250ns and max 380ns for td(on) and would be typ 100ns and max 150ns for tr. (10)Its diode forward on-voltage would be typ 1.18V and max 1.7V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!