DescriptionThe 2SK1830 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed switching applications as well as analog switch applications. There are some features as follows: (1)2.5 V gate drive; (2)low threshold voltage: Vth=0.5 to 1.5 V; (3)high speed; (4)enhancement mode; (5)small package.
What comes next is the maximum ratings of 2SK1830 (Ta=25): (1)drain-source voltage, VDS: 20 V; (2)gate-source voltage, VGSS: 10 V; (3)drain current, ID: 50 mA; (4)drain power dissipation (Tc=25), PD: 100 mW; (5)channel temperature, Tch: 150; (6)storage temperature range, Tstg: -55 to 150.
The following is the electrical characteristicsof 2SK1830 (Ta=25): (1)gate leakage current, IGSS: 1A at VGS=10 V, VDS=0 V; (2)drain cut-off current, IDSS: 1A max at VDS=20 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 20 V min at ID=100A, VGS=0 V; (4)gate threshold voltage, Vth: 0.5 V min and 1.5 V max at VDS=3 V, ID=0.1 mA; (5)drain-source ON resistance, RDS(ON): 20 typ and 40 max at ID=10 mA, VGS=2.5 V; (6)forward transfer admittance, |Yfs|: 20 mS min at VDS=3 V, ID=10 mA; (7)input capacitance, Ciss: 5.5 pF typ at VDS=3 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 1.6 pF typ at VDS=3 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 6.5 pF typ at VDS=3 V, VGS=0 V, f=1 MHz.
The 2SK1830 is a kind of field effect N-channel silicon MOS transistor. It can be used in high speed switching and analog switch applications. It has some features as follows. (1) 2.5 V gate drive; (2) low threshold voltage which is from 0.5 V to 1.5 V; (3) high speed; (4) enhancement mode; (5) small package.
The next is smoe information about its maximum ratings at TA is 25 . (1): drain-source volatge (VDS) is 20 V; (2): gate-source voltage (VGSS) is 10 V; (3): DC drain current (ID) is 50 mA; (4): drain power dissipation (PD) is 100 mW; (5): channel temperature (Tch) is 150 ; (6): storage temperature is from -55 to 150 . Then is about its electrical characters. (1): the minimum drain-source breakdown voltage is 20 V at ID is 100 A and VGS is 0; (2): gate threshold volatge is from 0.5 V to 1.5 V; (3): the typical input capacitance is 5.0 pF at VDS is 3 V, VGS is 0 and F is 1 MHz; (4): the typical output capacitance is 6.5 pF when VDS is 3 V, VGS is 0 and F is 1 MHz.
If you want more information about it,please download the datasheet at www.seekic.com.
2SK1830 Data Sheet
