2SK1825

The 2SK1825 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed switching applications as well as analog switch applications. There are some features as follows: (1)4 V gate drive; (2)low threshold voltage: Vth=0.8 to 2.5 V; (3)high speed; (4)enhancement mode; (5)small package.

What comes next is about the maximum ratings (Ta=25): (1)drain-source voltage, VDS: 50 V; (2)gate-source voltage, VGSS: 10 V; (3)drain current, ID: 50 mA; (4)drain power dissipation (Tc=25), PD: 300 mW; (5)channel temperature, Tch: 150; (6)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics (Ta=25): (1)gate leakage current, IGSS: 1A at VGS=10 V, VDS=0 V; (2)drain cut-off current, IDSS: 1A max at VDS=50 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 50 V min at ID=100A, VGS=0 V; (4)gate threshold voltage, Vth: 0.8 V min and 2.5 V max at VDS=5 V, ID=0.1 mA; (5)drain-source ON resistance, RDS(ON): 20 typ and 50 max at ID=10 mA, VGS=4.0 V; (6)forward transfer admittance, |Yfs|: 20 mS min at VDS=5 V, ID=10 mA; (7)input capacitance, Ciss: 6.3 pF typ at VDS=5 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 1.3 pF typ at VDS=5 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 5.7 pF typ at VDS=5 V, VGS=0 V, f=1 MHz.