2SK1823-01R

DescriptionThe 2SK1823-01R is a kind of N-channel silicon power MOSFET. The typical applications include motor controllers, general purpose power amplifier and DC-DC converters. There are some features as follows: (1)high current; (2)low on-resistance; (3)no secondary breakdown; (4)low driving pow...

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SeekIC No. : 004225748 Detail

2SK1823-01R: DescriptionThe 2SK1823-01R is a kind of N-channel silicon power MOSFET. The typical applications include motor controllers, general purpose power amplifier and DC-DC converters. There are some featu...

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Part Number:
2SK1823-01R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Description

The 2SK1823-01R is a kind of N-channel silicon power MOSFET. The typical applications include motor controllers, general purpose power amplifier and DC-DC converters. There are some features as follows: (1)high current; (2)low on-resistance; (3)no secondary breakdown; (4)low driving power; (5)high forward transconductance; (6)avalanche-proof; (7)including G-S zener diode.

The following is about the maximum ratings (TC=25): (1)drain-source voltage, VDSS: 60 V; (2)continuous drain current, ID: 50 A; (3)pulsed drain current, ID(pulse): 200 A; (4)continuous reverse drain current, IDR: 50 A; (5)gate-source peak voltage, VGSS: ±20 V; (6)maximum power dissipation, PD: 80 W; (7)operating temperature range, Tch: 150; (8)storage temperature range, Tstg: -55 to +150.

The last one is about the electrical characteristics (TC=25): (1)drain-source breakdown voltage, V(BR)DSS: 60 V min at ID=1 mA, VDS=0 V; (2)gate threshold voltage, VGS(th): 1.0 V min, 1.5 V typ and 2.0 V max at ID=10 mA, VDS=VGS; (3)zero gate voltage drain current, IDSS: 500A max at VDS=60 V, VGS=0 V, Tch=25 and 1.0 mA at at VDS=60 V, VGS=0 V, Tch=125; (4)gate-source leakage current, IGSS: 10 A max at VGS=±16 V, VDS=0 V.




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