2SK1819-01MR

The 2SK1819-01MR is a kind of N-channel enhancement type MOSFET. The typical applications include motor controllers, inverters and choppers. There are some features as follows: (1)include fast recovery diode; (2)high voltage; (3)low driving power; (4)avalanche-proof.

The following is the maximum ratings of 2SK1819-01MR(TC=25): (1)drain-source voltage, VDSS: 450 V; (2)continuous drain current, ID: 5 A; (3)pulsed drain current, ID(pulse): 20 A; (4)continuous reverse drain current, IDR: 5 A; (5)gate-source peak voltage, VGSS: ±25 V; (6)maximum power dissipation, PD: 35 W; (7)operating temperature range, Tch: 150; (8)storage temperature range, Tstg: -55 to +150.

The last one is the electrical characteristics of 2SK1819-01MR(TC=25): (1)drain-source breakdown voltage, V(BR)DSS: 450 V min at ID=1 mA, VDS=0 V; (2)gate threshold voltage, VGS(th): 2.1 V min, 3.0 V typ and 4.0 V max at ID=10 mA, VDS=VGS; (3)zero gate voltage drain current, IDSS: 10A typ and 500A max at VDS=450 V, VGS=0 V, Tch=25; (4)gate-source leakage current, IGSS: 10 nA typ and 100 nA max at VGS=±25 V, VDS=0 V; (5)drain-source on-state resistance, RDS(on): 1.1 typ and 1.5 max at ID=2.5 A, VGS=10 V.