DescriptionThe 2SK1796 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS 1.2 (VGS = 10V, ID = 5A); (2)low Ciss = 2500 pF TYP; (3)Built-in G-S gate protection diode; (4)high avalanche capabi...
2SK1796: DescriptionThe 2SK1796 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS 1.2 (VGS = 10V, ...
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The 2SK1796 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS 1.2 (VGS = 10V, ID = 5A); (2)low Ciss = 2500 pF TYP; (3)Built-in G-S gate protection diode; (4)high avalanche capability ratings.
What comes next is the maximum ratings of 2SK1796: (1)drain to source voltage: 900V; (2)gate to source voltage: ±30V; (3)drain current(DC): ±10A; (4)drain current(pulse): ±20A; (5)total power dissipation(Tc = 25): 150W; (6)channel temperature: 150; (7)storge temperature: -55 to +150; (8)single avalanche current: 10A; (9)single avalanche energy: 60mJ.
The following is the electrical characteristics of 2SK1796: (1)drain to source on-state resistance: 1.0 typical and 1.2 max at VGS=10V,ID=5A; (2)gate to source cutoff voltage: 2.5V min and 3.5V max at VDS=10V, ID=1mA; (3)forward transfer admittance: 1.5S min and 7.5S typical at VDS=20V, ID=5A; (4)drain leakage current: 100A max at VDS=900V, ID=0; (5)gate to source leakage current: ±10A max at VGS=±30V, VDS=0; (6)input capacitance: 2500pF typical at VDS=10V, VGS=0, f=1MHz; (7)output capacitance: 370pF typical at VDS=10V, VGS=0, f=1MHz; (8)reverse transfer capacitance: 120pF typical at VDS=10V, VGS=0, f=1MHz. There is not much information about the product, if you want to get more information, please pay attention to our website and we will update it in time.