2SK1758

The 2SK1758 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 360 pF typ.;(4)low on-state resistance RDC(on)= 4.2 max. (VGS= 10 V, ID= 1 A).

The absolute maximum ratings of the 2SK1758 can be summarized as:(1)drain to source voltage: 600 V;(2)gate to source voltage: +/-30 V;(3)drain current (DC):±2.0 A;(4)drain current (pulse):±8.0 A;(5)total power dissipation (Tc=25 °C): 100 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1758 can be summarized as:(1)drain to source on-state resistance: 2.8 ;(2)gate to source cut-off voltage: 2.0 to 4.0 V;(3)forward transfer admittance: 1.3 S;(4)drain leakage current: 100 A;(5)gate to source leakage current: +/-10 A;(6)input capacit-ance: 360 pF;(7)output capacitance: 130 pF;(8)reverse transfer capacitance: 50 pF;(9)turn-on delay time: 5 ns;(10)rise time: 6 ns;(11)turn-off delay time: 60 ns;(12)fall time: 20 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.