2SK1750

The 2SK1750 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 610 pF typ.;(4)low on-state resistance RDC(on)= 1.4/1.5 max. (VGS=10 V, ID=2.5 A).

The absolute maximum ratings of the 2SK1750 can be summarized as:(1)drain to source voltage: 450 / 500 V;(2)gate to source voltage: +/-30 V;(3)drain current (DC):±5.0 A;(4)drain current (pulse):±20.0 A;(5)total power dissipation (Tc=25 °C): 50 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1750 can be summarized as:(1)drain to source on-state resistance: 1.1 or 1.2 ;(2)gate to source cut-off voltage: 2.5 to 3.5 V;(3)forward transfer admittance: 2.6 S;(4)drain leakage current: 100 A;(5)gate to source leakage current: +/-10 A;(6)input capacitance: 610 pF;(7)output capacitance: 200 pF;(8)reverse transfer capacitance: 80 pF;(9)turn-on delay time: 15 ns;(10)rise time: 25 ns;(11)turn-off delay time: 50 ns;(12)fall time: 20 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.