2SK1748

The 2SK1748 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 850 pF typ.;(4)low on-state resistance RDC(on)= 0.11 max. (VGS=10 V, ID=4 A).

The absolute maximum ratings of the 2SK1748 can be summarized as:(1)drain to source voltage: 60 V;(2)gate to source voltage: +/-20 V;(3)drain current (DC):±8.0 A;(4)drain current (pulse):±24.0 A;(5)total power dissipation (Tc=25 °C): 20 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1748 can be summarized as:(1)drain to source on-state resistance: 0.08 or 0.11 ;(2)gate to source cut-off voltage: 1.0 to 2.5 V;(3)forward transfer admittance: 5.0 S;(4)drain leakage current: 10 A;(5)gate to source leakage current: +/-10 A;(6)input capacitance: 850 pF;(7)output capacitance: 350 pF;(8)reverse transfer capacitance: 100 pF;(9)turn-on delay time: 15 ns;(10)rise time: 60 ns;(11)turn-off delay time: 100 ns;(12)fall time: 45 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.