Features: ` Adoption of FBET process.` Largeyfs` Small Ciss.` Small-sized package permitting 2SK1740-applied sets to be made small and slim.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Drai...
2SK1740: Features: ` Adoption of FBET process.` Largeyfs` Small Ciss.` Small-sized package permitting 2SK1740-applied sets to be made small and slim.PinoutSpecifications Parameter Symbol ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-to-Source Voltage |
VDSS |
40 |
V | |
Gate-to-Drain Voltage |
VGSS |
±40 |
V | |
Drain Current (DC) |
ID |
10 |
mA | |
Drain Current (Pulse) |
IDP |
75 |
mA | |
Allowable Power Dissipation |
PD |
250 |
mW | |
Channel Temperature |
Tch |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VDSX *VDSS [V] | 40 |
VGDS *VGDO [V] | 40 |
ID [mA] | 75 |
PD [mW] | 250 |
Electrical characteristics | |
---|---|
IDSS min [mA] | 40 |
IDSS max [mA] | 75 |
VDS [V] | 10 |
|yfs| typ *min [mS] | 30 |
VDS [V] | 10 |
f [kHz] | 1 |
Ciss typ [pF] | 11 |
VDS [V] | 10 |
f [MHz] | 1 |
Crss typ [pF] | 2.5 |
VDS [V] | 10 |
f [MHz] | 1 |
NF typ [dB] | 1.5 |
VDS [V] | 10 |
Rg [k] | 1 |
ID [mA] | 1 |
f [MHz] | 0.001 |