DescriptionThe 2SK1664 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 490 pF typ.;(4)low on-state resi...
2SK1664: DescriptionThe 2SK1664 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capabili...
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The 2SK1664 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 490 pF typ.;(4)low on-state resistance RDS(on)= 6.0 max. (VGS=10 V, ID=1 A).
The absolute maximum ratings of the 2SK1664 can be summarized as:(1)drain to source voltage: 700 V;(2)gate to source voltage: +/-30 V;(3)drain current (DC):±2.0 A;(4)drain current (pulse):±8.0 A;(5)total power dissipation (Tc=25 °C): 30 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.
And the electrical characteristics (TA=25 °C) of the 2SK1664 can be summarized as:(1)drain to source on-state resistance: 6.0 ;(2)gate to source cut-off voltage: 2.5 to 4.0 V;(3)forward transfer admittance: 0.5 S;(4)drain leakage current: 100 A;(5)gate to source leakage current: +/-100 A;(6)input capacitance: 490 pF;(7)output capacitance: 140 pF;(8)reverse transfer capacitance: 65 pF;(9)turn-on delay time: 10 ns;(10)rise time: 10 ns;(11)turn-off delay time: 40 ns;(12)fall time: 10 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.