2SK1658

The 2SK1658 is designed as one kind of N-channel vertical type MOS FET Array that can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not require consideration of driving current, it is suitable for applicances including filter circuit. Features of this device are:(1)directly driven by ICs having a 3 V power supply;(2)has low on-state resistance: IGSS= +/-5 nA max. @ VGS=+/-3.0 V;(3)possible to reduce the number of parts by omitting the bias resistor;(4)not necessary to consider driving current because of its high input impedance.

The absolute maximum ratings of the 2SK1658 can be summarized as:(1)drain to source voltage: 30 V;(2)gate to source voltage: +/-7 V;(3)drain current (DC):±100 mA;(4)drain current (pulse):±0.2 A;(5)total power dissipation (Tc=25 °C): 0.15 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1658 can be summarized as:(1)drain to source on-resistance: 25 or 18 ;(2)gate to source cut-off voltage: 0.9 to 1.5 V;(3)forward transfer admittance: 40 mS;(4)drain cut-off current: 10 A;(5)gate to source leakage current: +/-5.0 A;(6)input capacitance: 15 pF;(7)output capacitance: 10 pF;(8)feedback capacitance: 1.5 pF;(9)turn-on delay time: 50 ns;(10)rise time: 23 ns;(11)turn-off delay time: 34 ns;(12)fall time: 43 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.