DescriptionThe 2SK1549-R is a kind of N-channel enhancement mode power MOSFET. It is designed for switching. The following is the absolute maximum ratings of 2SK1549-R at TC=25: (1)drain-source voltage, VDSS: 250 V; (2)drain-gate voltage, VDGR: 250 V at RGS=20 k; (3)continuous drain current, ID: ...
2SK1549-R: DescriptionThe 2SK1549-R is a kind of N-channel enhancement mode power MOSFET. It is designed for switching. The following is the absolute maximum ratings of 2SK1549-R at TC=25: (1)drain-source vol...
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The 2SK1549-R is a kind of N-channel enhancement mode power MOSFET. It is designed for switching.
The following is the absolute maximum ratings of 2SK1549-R at TC=25: (1)drain-source voltage, VDSS: 250 V; (2)drain-gate voltage, VDGR: 250 V at RGS=20 k; (3)continuous drain current, ID: ±20 A; (4)pulsed drain current, ID(pulse): ±80 A; (5)gate-source voltage, VGS: ±20 V; (6)maximum power dissipation, PD: 80 W; (7)operating temperature, Tch: 150; (8)storage temperature range, Tstg: -55 to +150; (9)thermal resistance channel to air, Rth(ch-a): 1.56/W; (10)thermal resistance channel to case, Rth(ch-c): 30.0/W.
What comes next is the electrical characteristics of 2SK1549-R at TC=25 (unless otherwise specified): (1)drain-source breakdown voltage, BVDSS: 250 V min at ID=1 mA, VGS=0 V; (2)gate threshold voltage, VGS(th): 2.1 V min, 3.0 V typ and 4.0 V max at ID=10 mA, VDS=VGS; (3)zero gate voltage drain current, IDSS: 10A typ and 500A max at VDS=250 V, VGS=0 V, Tch=25; (4)zero gate voltage drain current, IDSS: 0.2 mA typ and 1.0 mA max at VDS=250 V, VGS=0 V, Tch=125; (5)gate-source leakage current, IGSS: 10 nA typ and 100 nA max at VGS=±20 V, VDS=0 V; (6)drain-source-on-state resistance, RDS(on): 0.11 typ and 0.15 max at ID=10 A, VGS=10 V.