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2SK1489(Q)

MOSFET MOSFET N-Ch 1000V 12A Rdson 1 Ohm

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SeekIC No. : 00152356 Detail

2SK1489(Q): MOSFET MOSFET N-Ch 1000V 12A Rdson 1 Ohm

2SK1489(Q) Data Sheet

floor Price/Ceiling Price

US $ 5.63~9.37 / Piece | Get Latest Price
Part Number:
2SK1489(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $9.37
  • $7.5
  • $6.38
  • $5.63
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : TO-3P
Packaging : Bulk    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1 Ohms


Parameters:

Technical/Catalog Information2SK1489(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs1 Ohm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-3P(L) (2-21F1B)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK1489 Q
2SK1489Q



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