2SK1486

The 2SK1486 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. There are some features as follows: (1)low drain-source ON resistance: RDS(ON)=0.08 (typ); (2)high forward transfer admittance: |Yfs|=14 S (typ); (3)low leakage current: IDSS=300A (max) (VDS=300 V); (4)enhancement-mode: Vth=2.0 to 4.0 V (VDS=10 V, ID=1 mA).

What comes next is about the maximum ratings (Ta=25): (1)drain-source voltage, VDSS: 300 V; (2)drain-gate voltage (RGS=20 k), VDGR: 300 V; (3)gate-source voltage, VGSS: ±30 V; (4)drain current, ID: 32 A when DC and 128 A when pulse; (5)drain power dissipation (Tc=25), PD: 200 W; (6)channel temperature, Tch: 150; (7)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics (Ta=25): (1)gate leakage current, IGSS: ±100 nA at VGS=±30 V, VDS=0 V; (2)drain cut-off current, IDSS: 300A max at VDS=300 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 300 V min at ID=10 mA, VGS=0 V; (4)gate threshold voltage, Vth: 2.0 V min and 4.0 V max at VDS=10 V, ID=1 mA; (5)drain-source ON resistance, RDS(ON): 0.08 typ and 0.095 max at ID=16 A, VGS=10 V; (6)forward transfer admittance, |Yfs|: 10 S min and 14 S typ at VDS=10 V, ID=16 A; (7)input capacitance, Ciss: 3500 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 800 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 1250 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.