Features: SpecificationsDescription The 2SK1444 is designed as N-channel silicon MOSFET which would be with ultrahigh-speed switching applications. 2SK1444 has three features.The first one is that it would have low ON-state resistance.The second one is that it would have ultrahigh-speed switching....
2SK1444: Features: SpecificationsDescription The 2SK1444 is designed as N-channel silicon MOSFET which would be with ultrahigh-speed switching applications. 2SK1444 has three features.The first one is that i...
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The 2SK1444 is designed as N-channel silicon MOSFET which would be with ultrahigh-speed switching applications.
2SK1444 has three features.The first one is that it would have low ON-state resistance.The second one is that it would have ultrahigh-speed switching.The third one is that it would have micaless package facilitating easy mounting.That are all the features.
Some absolute maximum ratings and electrical characteristics(Ta=25) of 2SK1444 have ben concluded into several points as follow.The first one is about its drain-to-source voltage which would be 450V.The second one is about its gate-to-source voltage which would be ±30V.The third one is about its drain current(DC) which would be 3A.The fourth one is about its drain surrent(pulse) which would be 12A.The fifth one is about its allowable power dissipation which would be 2.0W.The sixth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be from -55 to +150°C.
Also some electrical characteristics at Ta=25°C about 2SK1444.The first one is about its D-S breakdown voltage which would be 450(min) V with condition of Id=1mA,Vgs=0.The second one is about its zero-gate voltage drain current which would be 1.0(max) mA with condition of Vds=450V,Vgs=0.The third one is about its gate-to-source leakage current which would be ±100(max) nA with condition of Vgs=±30V,Vds=0.The fourth one is about its cutoff voltage which would be from 2.0 to 3.0 V with condition of Vds=10V,Id=1mA.The fifth one is about its forward transfer admittance which would be 1.1(min) and 2.2(typ) S with condition of Vds=10V,Id=0.5A.The sixth one is about its static drain-to-source ON-state resistance which would be 2.0(typ) and 2.6(max) with condition of Id=0.5A and Vgs=10V.The seventh one is about its input capacitance which would be 400 pF with condition of Vds=20V,f=1MHz.The eighth one is about its output capacitance which would be 60 pF with condition of Vds=20V,f=1MHz.And so on.For more information please contact us.
Something should be noted that be careful in handling the 2SK1444 because it has no protaction diode between gate and source.