2SK1423

DescriptionThe 2SK1423 is a kind of N-channel MOS silicon FET.It can be used for high speed switching applications.It has some features as follows.(1) low on-state resistance; (2) very high-speed switching; (3) converters. The following is absolute maximum ratings of 2SK1423 at TA is 25. (1): dra...

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SeekIC No. : 004225538 Detail

2SK1423: DescriptionThe 2SK1423 is a kind of N-channel MOS silicon FET.It can be used for high speed switching applications.It has some features as follows.(1) low on-state resistance; (2) very high-speed sw...

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Part Number:
2SK1423
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The 2SK1423 is a kind of N-channel MOS silicon FET.It can be used for high speed switching applications.It has some features as follows.(1) low on-state resistance; (2) very high-speed switching; (3) converters.

The following is absolute maximum ratings of 2SK1423 at TA is 25. (1): drain-source voltage(VDSS) is 60 V; (2): gate-source voltage(VGSS) is ±20 V; (3): DC drain current(ID) is 80 A and pulse drain current is 320 A; (4): allowable power dissipation(PD) is 150 W ; (5): channel temperature (TCH) is 150; (6): storage temperature range is from -55 to 150.

What comes next is the electrical characters of 2SK1423 at TA is 25. (1): the minimum drain-source breakdown voltage is 60 V when ID is 1 mA and VGS is 0; (2): the minimum cutoff voltage is 1.5 V and is 2.5 for the maximum at VDS is 10 V and ID is 1 mA; (3): the typical input capacitance is 4800 pF when VDS is 20 V and f is 1 MHz; (4): the typical turn-on delay time is 55 ns and is 345 ns for the rise time and is 450 ns for the turn-off delay time and is 400 for the fall time when ID is 50 A,VGS is 10 V,VDD is 30 V and RGS is 50 ; (5): the maximum diode forward voltage is 1.8 V at the condition of IS is 80 A and VGS is 0.




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