DescriptionThe 2SK1419 is a kind of N-channel MOS silicon FET.It can used in very high-speed switching applications. The following is features of 2SK1419: (1) low on-resistance; (2) very high-speed switching; (3) converters; (4) micaless package facilitating easy mounting. What comes next is abs...
2SK1419: DescriptionThe 2SK1419 is a kind of N-channel MOS silicon FET.It can used in very high-speed switching applications. The following is features of 2SK1419: (1) low on-resistance; (2) very high-speed...
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The 2SK1419 is a kind of N-channel MOS silicon FET.It can used in very high-speed switching applications.
The following is features of 2SK1419: (1) low on-resistance; (2) very high-speed switching; (3) converters; (4) micaless package facilitating easy mounting.
What comes next is absolute maximum ratings of 2SK1419 at TA is 25. (1): drain to source voltage(VDSS) is 60 V; (2): gate to source voltage(VGSS) is ±20 V; (3): drain current(DC) is 15 A; (4): drain current(pulse) is 60 A; (5): allowable power dissipation(PD) is 25 W; (6): storage temperature(TSTG) is from -55 to 150;(7): channel temperature is 150 ; (8): gate to source leakage current is ±100 nA at VGS is ±20 V and VDS is 0 V; (9): input capacitance is 750 pF when VDS is 20 V and f is 1 MHz; (10): rise time is 43 ns and fall time is 90 ns; (11); diode forward voltage is 1.8 V at the condition of IS is 15 A and VGS is 0 V; (12): reverse transfer capacitance is 90 pF at VDS is 20 V and f is 1 MHz.