Features: Directly driven by ICs having a 3-V power supply.Not necessary to consider driving current because of its high input impedance.Possible to reduce the number of parts by omitting the bias resistor.Can be used complementary with the 2SJ184.SpecificationsDrain to Source Voltage (VGS= 0 V) ...
2SK1398: Features: Directly driven by ICs having a 3-V power supply.Not necessary to consider driving current because of its high input impedance.Possible to reduce the number of parts by omitting the bias r...
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Directly driven by ICs having a 3-V power supply.
Not necessary to consider driving current because of its high input impedance.
Possible to reduce the number of parts by omitting the bias resistor.
Can be used complementary with the 2SJ184.
Drain to Source Voltage (VGS= 0 V) VDSS 50 V
Gate to Source Voltage (VDS= 0 V) VGSS ±7.0 V
Drain Current (DC) ID(DC) ±100 mA
Drain Current (pulse) Note ID(pulse) ±200 mA
Total Power Dissipation PT 250 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Note PW 10 ms, Duty cycle 50 %
The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos which need power saving.