2SK1359(F), US $ .23-.3 , Toshiba, 2SK1359(F) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00159329 Detail

2SK1359(F): MOSFET N-Ch FET RDS 3.0 Ohm IDSS 300uA VDSS 1kV

2SK1359(F) Data Sheet

US $ .23~.3 / Piece | Get Latest Price

Part Number:: 2SK1359(F)
Mfg:: Toshiba
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	5 A
Resistance Drain-Source RDS (on) :	3.8 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3 PN	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 3.8 Ohms
Package / Case : TO-3 PN

Parameters:

Technical/Catalog Information	2SK1359(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	3.8 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK1359 F 2SK1359F

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2SK1359(F)

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