2SK1289

The 2SK1289 is designed as one kind of N-channel power MOS Field Effect transistor designed for solenoid, motor and lamp driver. As the MOSFET is driven by low voltage and does not require consideration of driving current, it is suitable for applicances including filter circuit. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 1400 pF typ.;(4)low on-state resistance RDS(on)= 0.15 max. (VGS=10 V, ID=10 A).

The absolute maximum ratings of the 2SK1289 can be summarized as:(1)drain to source voltage: 100 V;(2)gate to source voltage: +/-20 V;(3)drain current (DC):±20 A;(4)drain current (pulse):±80 A;(5)total power dissipation (Tc=25 °C): 60 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1289 can be summarized as:(1)drain to source on-resistance: 0.12 or 0.15 ;(2)gate to source cut-off voltage: 1.0 to 2.5 V;(3)forward transfer admittance: 14 S;(4)drain leakage current: 10 A;(5)gate to source leakage current: +/-10.0 A;(6)input capacita-nce: 1400 pF;(7)output capacitance: 350 pF;(8)reverse transfer capacitance: 50 pF;(9)turn-on delay time: 25 ns;(10)rise time: 110 ns;(11)turn-off delay time: 100 ns;(12)fall time: 65 ns. If you want to know more information such as the electrical characteristics about 2SK1289, please download the datasheet in www.seekic.com or www.chinaicmart.com.