Features: Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2ALow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to Source voltage VGSS ±20 V ...
2SK1284: Features: Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2ALow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Ratings ...
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Parameter |
Symbol |
Ratings |
Unit | |
Drain to source voltage |
VDSS |
100 |
V | |
Gate to Source voltage |
VGSS |
±20 |
V | |
Drain current (DC) |
ID |
±3.0 |
A | |
Drain current(pulse) * |
ID |
±12 |
A | |
Allowable power dissipation |
TC = 25°C Ta = 25°C |
PD |
2.0 1.0 |
W W |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |