2SK1284

Features: Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2ALow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to Source voltage VGSS ±20 V ...

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SeekIC No. : 004225467 Detail

2SK1284: Features: Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2ALow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Ratings ...

floor Price/Ceiling Price

Part Number:
2SK1284
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

Low on-state resistance
RDS(on) 0.32 .@VGS=10V,ID=2A
RDS(on) 0.40 @VGS=4V,ID=2A
Low Ciss Ciss=500pF TYP.
Built-in G-S Gate Protection Diode



Specifications

Parameter
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to Source voltage
VGSS
±20
V
Drain current (DC)
ID
±3.0
A
Drain current(pulse) *
ID
±12
A
Allowable power
dissipation
TC = 25°C
Ta = 25°C
PD
2.0
1.0
W
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
-55 to +150
°C



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