2SK1214

The 2SK1214 is designed as one kind of silicon N-channel power F-MOS FET that can be used in (1)DC-DC converter;(2)no contact relay;(3)solenoid drive;(4)motor drive. And the features of the 2SK1214 are:(1)low ON resistance RDS(on):RDC(on)1 = 0.06 (typ.);(2)high switching rate: tr=110 ns (typ.);(3)no secondary breakdown;(4)low voltage drive is possible (VGS = 4 V).

The absolute maximum ratings of the 2SK1214 can be summarized as:(1)drain-source voltage: 80 V;(2)gate-source voltage: +/-20 V;(3)power dissipation (Tc=25 ): 45 W;(4)power dissipation (Ta=25 ): 2.0 W;(5)channel temperature: 150 ;(6)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SK1214 can be summarized as:(1)drain current: 10 uA;(2)gate-source current: +/- 1 uA;(3)drain-source voltage: 80 V;(4)gate threshold voltage: 1 to 2.5 V;(5)forward transfer admittance: 6 to 10 s;(6)turn on time: 60 ns;(7)fall time: 110 ns;(8)delay time: 330 ns. If you want to know more information such as the electrical characteristics about the 2SK1214, please download the datasheet in www.seekic.com or www.chinaicmart.com .