2SK1212-01

The 2SK1212-01 is designed as N-channel silicon power MOSFET. Typical applications include DC-DC converters, motor controllers, general purpose power amplifier.

2SK1212-01 has five features. (1) It has high current. (2) It has low on-resistance. (3) No secondary breakdown. (4) It has low driving power. (5) Ava;anche proof. That are all the main features.

Some absolute maximum ratings of 2SK1212-01 have been concluded into several points as follow. (1) Its drain source voltage would be 900V. (2) Its continuous drain current would be 5A. (3) Its pulsed drain current would be 20A. (4) Its continuous reverse drain current would be 5A. (5) Its gate to source peak voltage would be +/-20V. (6) Its maximum power dissipation would be 80W. (7) Its channel temperature would be 150°C. (8) Its storage temperature range would be from -55°C to +150°C.

Also some electrical characteristics about 2SK1212-01. (1) Its drain to source breakdown voltage would be min 900V. (2) Its gate threshold voltage would be min 2.1V and typ 3.0V and max 4.0V. (3) Its zero gate voltage drain current would be typ 10uA and max 500uA at 25°C and would be typ 0.2mA and max 1.0mA at 125°C. (4) Its gate source leakage current would be typ 10nA and max 100nA. (5) Its drain to source on-state resistance would be typ 2.0 and max 2.5. (6) Its forward transconductance would be min 3.0S and typ 6.0S. (7) Its input capacitance would be typ 1500pF and max 2400pF. (8) Its output capacitance would be typ 150pF and max 240pF. (9) Its reverse transfer capacitance would be typ 50pF and max 80pF. (10) Its diode forward on-voltage would be typ 1.0V and max 1.5V. (11) Reverse recovery time would be typ 900ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!