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2SK118

Application• High breakdown voltage: VGDS = −50 V• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)• Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz)• Small packageSpecifications Characteristics Symbol Rating Unit Gate-drain voltage ...

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2SK118: Application• High breakdown voltage: VGDS = −50 V• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)• Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz)&#...

2SK118 Data Sheet

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Part Number:
2SK118
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Upload time: 2024/12/25

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Product Details

Description



Application

• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz)
• Small package


Specifications

Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −50 V
Gate current IG 10 mA
Drain power dissipation PD 100 mW
Junction temperature Tj 125
Storage temperature range Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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