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2SK117

Application• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)• High breakdown voltage: VGDS = −50 V• Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)Specifications ...

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SeekIC No. : 004225443 Detail

2SK117: Application• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)• High breakdown voltage: VGDS = −50 V• Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, R...

2SK117 Data Sheet

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Part Number:
2SK117
Supply Ability:
5000

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Product Details

Description



Application

• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
                     (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)


Specifications

Characteristics Symbo Rating Unit
Gate-drain voltage VGDS −50 V
Gate current IG 10 mA
Drain power dissipation PD 300 mW
Junction temperature Tj 125  
Storage temperature range Tstg −55~125  

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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