2SK1120

ApplicationLow drain−source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Rating ...

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SeekIC No. : 004225418 Detail

2SK1120: ApplicationLow drain−source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mo...

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Part Number:
2SK1120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Application

Low drain−source ON resistance : RDS (ON) = 1.5 (typ.)
High forward transfer admittance : |Yfs| = 4.0 S (typ.)
Low leakage current : IDSS = 300 A (max) (VDS = 800 V)
Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)





Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
1000
V
Drain?gate voltage (RGS = 20 k)
VDGR
1000
V
Gate?source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
8
A
Pulse (Note 1)
IDP
24
Drain power dissipation (Tc = 25)
PD
150
W
Channel temperature
Tch
150
Storage temperature range
TSTG
-55 ~ 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).






Description

The 2SK1120 has four features.(1) Low drain-source ON resistance : RDS(ON)=1.5 (Typ.).(2) High forward transfer admittance : Yfs = 4.0S (Typ.).(3) Low leakage current : IDSS=300A(Max)(VDS=800V).(4) Enhancement-mode : Vth=1.5 to 3.5V(VDS=10V,ID=1mA).

The 2SK1120 has some absolute maximum ratings at Ta = 25.(1) The characteristic is drain to source voltage,the symbol is VDSS,the rating is 1000,the unit is V.(2) The characteristic is gate to source voltage,the symbol is VGSS,the rating is ±20,the unit is V.(3) The characteristic is drain current(DC),the symbol is ID,the rating is 8,the unit is A.(4) The characteristic is drain current(pulse),the symbol is IDP,the rating is 24,the unit is A.(5) The characteristic is allowable power dissipation,the symbol is PD,the conditions is Tc = 25,the rating is 150,the unit is W.(6) The characteristic is drain gate voltage (RGS=20k),the symbol is VGR,the rating is 1000,the unit is V.(7) The characteristic is channel temperature,the symbol is Tch,the rating is 150,the unit is .(8) The characteristic is storage temperature,the symbol is Tstg,the rating is -55 to +150,the unit is .

The information contained herein is presented only as a guide for the applications of our products.No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellecation or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or other.The information contained herein is subject to change without notice.






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