2SK1119 Selling Leads, Price trend, 2SK1119 DataSheet download, circuit diagram from SeekIC.com

Application􀁺` Low drain−source ON resistance : RDS (ON) = 3.0 (typ.)􀁺` High forward transfer admittance : |Yfs| = 2.0 S (typ.)􀁺` Low leakage current : IDSS = 300 A (max) (VDS = 800 V)􀁺` Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specificati...

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SeekIC No. : 004225417 Detail

2SK1119: Application􀁺` Low drain−source ON resistance : RDS (ON) = 3.0 (typ.)􀁺` High forward transfer admittance : |Yfs| = 2.0 S (typ.)􀁺` Low leakage current : IDSS = 300 A ...

2SK1119 Data Sheet

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Part Number:: 2SK1119
Supply Ability:: 5000

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Upload time: 2024/10/17

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Product Details

Description

Application

􀁺` Low drain−source ON resistance : R_{DS (ON)} = 3.0 (typ.)
􀁺` High forward transfer admittance : |Yfs| = 2.0 S (typ.)
􀁺` Low leakage current : I_DSS = 300 A (max) (V_DS = 800 V)
􀁺` Enhancement mode : V_th= 1.5~3.5 V (V_DS = 10 V, I_D = 1 mA)

Specifications

Characteristic		Symbol	Rating	Unit
Drain?source voltage		V_DSS	1000	V
Drain?gate voltage (R_GS = 20 k)		V_DGR	1000	V
Gate?source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	I_D	4	A
Drain current	Pulse (Note 1)	I_DP	12	A
Drain power dissipation (Tc = 25°C)		P_D	100	W
Channel temperature		T_ch	150
Storage temperature range		T_stg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SK1119

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