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2SK1119

Application􀁺` Low drain−source ON resistance : RDS (ON) = 3.0 (typ.)􀁺` High forward transfer admittance : |Yfs| = 2.0 S (typ.)􀁺` Low leakage current : IDSS = 300 A (max) (VDS = 800 V)􀁺` Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specificati...

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2SK1119: Application􀁺` Low drain−source ON resistance : RDS (ON) = 3.0 (typ.)􀁺` High forward transfer admittance : |Yfs| = 2.0 S (typ.)􀁺` Low leakage current : IDSS = 300 A ...

2SK1119 Data Sheet

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Part Number:
2SK1119
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

􀁺` Low drain−source ON resistance : RDS (ON) = 3.0 (typ.)
􀁺` High forward transfer admittance : |Yfs| = 2.0 S (typ.)
􀁺` Low leakage current : IDSS = 300 A (max) (VDS = 800 V)
􀁺` Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Rating Unit
Drain?source voltage VDSS 1000 V
Drain?gate voltage (RGS = 20 k) VDGR 1000 V
Gate?source voltage VGSS ±20 V
Drain current DC (Note 1) ID 4 A
Pulse (Note 1) IDP 12 A
Drain power dissipation (Tc = 25°C) PD 100 W
Channel temperature Tch 150
Storage temperature range Tstg -55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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