2SK1109

Features: • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - SSpecifications Drain to Source Voltage VDSX 20 V Gate to Drai...

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2SK1109 Picture
SeekIC No. : 004225416 Detail

2SK1109: Features: • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and hi...

floor Price/Ceiling Price

Part Number:
2SK1109
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S


Specifications

Drain to Source Voltage
VDSX
20
V
Gate to Drain Voltage
VGDO
20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
80
mW
Junction Temperature
V GS
±20
V
Max. Power Dissipation
Tj
125
°C

Storage Temperature

Tstg
55 to +125
°C



Description

The 2SK1109 is suitable for converter of ECM.


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