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2SK1061

Application• Excellent switching times: ton = 14 ns (typ.)• High forward transfer admittance: |Yfs| = 100 mS (min)• Low on resistance: RDS (ON) = 0.6 (typ.)• Enhancement-mode• Complementary to 2SJ167Specifications Characteristics Symbol Rating Unit Drain-s...

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2SK1061: Application• Excellent switching times: ton = 14 ns (typ.)• High forward transfer admittance: |Yfs| = 100 mS (min)• Low on resistance: RDS (ON) = 0.6 (typ.)• Enhancement-mod...

2SK1061 Data Sheet

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Part Number:
2SK1061
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Application

• Excellent switching times: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
• Low on resistance: RDS (ON) = 0.6 (typ.)
• Enhancement-mode
• Complementary to 2SJ167


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDS 60 V
Gate-source voltage VGSS ±20 V
Drain current DC ID 200 V
Pulse IDP 800 mA
Drain power dissipation (Ta = 25) PD 300 mW
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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