2SK1058-E

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 100W
Manufacturer: Renesas Electronics America
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Input Capacitance (Ciss) @ Vds: 600pF @ 10V
Drain to Source Voltage (Vdss): 160V


Parameters:

Technical/Catalog Information	2SK1058-E
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	160V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	600pF @ 10V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK1058 E 2SK1058E