2SJ681

Features: ` 4-V gate drive` Low drain−source ON resistance: RDS(ON) = 0.12 (typ.)` High forward transfer admittance: |Yfs| = 5.0 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS = −60 V)` Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1...

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SeekIC No. : 004225374 Detail

2SJ681: Features: ` 4-V gate drive` Low drain−source ON resistance: RDS(ON) = 0.12 (typ.)` High forward transfer admittance: |Yfs| = 5.0 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS ...

floor Price/Ceiling Price

Part Number:
2SJ681
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` 4-V gate drive
` Low drain−source ON resistance: RDS(ON) = 0.12 (typ.)
` High forward transfer admittance: |Yfs| = 5.0 S (typ.)
` Low leakage current: IDSS = −100 A (max) (VDS = −60 V)
` Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)



Specifications

Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 k)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
Drain current DC(Note 1)
ID
−5
A
Pulse (Note 1)
IDP
−20
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy (Note 2)
EAS
40.5
mJ
Avalanche current
IAR
-5
A
Repetitive avalenche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55~150

Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = −25 V, Tch = 25(initial), L = 2.2 mH,RG = 25 , IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.




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