Features: ` 4-V gate drive` Low drain−source ON resistance: RDS(ON) = 0.12 (typ.)` High forward transfer admittance: |Yfs| = 5.0 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS = −60 V)` Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1...
2SJ681: Features: ` 4-V gate drive` Low drain−source ON resistance: RDS(ON) = 0.12 (typ.)` High forward transfer admittance: |Yfs| = 5.0 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS ...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain−source voltage |
VDSS |
−60 |
V | |
Drain−gate voltage (RGS = 20 k) |
VDGR |
−60 |
V | |
Gate−source voltage |
VGSS |
±20 |
V | |
Drain current | DC(Note 1) |
ID |
−5 |
A |
Pulse (Note 1) |
IDP |
−20 |
A | |
Drain power dissipation |
PD |
20 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
40.5 |
mJ | |
Avalanche current |
IAR |
-5 |
A | |
Repetitive avalenche energy (Note 3) |
EAR |
2 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
Tstg |
-55~150 |
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = −25 V, Tch = 25(initial), L = 2.2 mH,RG = 25 , IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.