2SJ680 Selling Leads, Price trend, 2SJ680 DataSheet download, circuit diagram from SeekIC.com

Application`Low drain-source ON-resistance: RDS(ON)= 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.) `Low leakage current: IDSS= 100A (max) (VDS = 200 V)`Enhancement model: Vth = 1.5 ~ 3.5 V (VDS = 10 V, ID= 1 mA)Specifications Characteristic Symbol Rating Unit ...

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SeekIC No. : 004225373 Detail

2SJ680: Application`Low drain-source ON-resistance: RDS(ON)= 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.) `Low leakage current: IDSS= 100A (max) (VDS = 200 V)`Enhancement model: Vth = 1...

2SJ680 Data Sheet

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Part Number:: 2SJ680
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/21

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Recent History
What is this?

2SJ600 evaluate
Features: • Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)RDS(on)2 = 7...
2SJ601 evaluate
Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 4...
2SJ602 evaluate
Features: • Super low on-state resistance:RDS(on)1 = 73 m MAX. (VGS = −10 V, ID = W...

Product Details

Description

Application

`Low drain-source ON-resistance: R_DS(ON) = 1.6 (typ.)
`High forward transfer admittance: |Yfs| = 2.0 S (typ.)
`Low leakage current: I_DSS = 100A (max) (V_DS = 200 V)
`Enhancement model: V_th = 1.5 ~ 3.5 V (V_DS = 10 V, I_D= 1 mA)

Specifications

Characteristic		Symbol	Rating	Unit
Drain-source voltage Drain-gate voltage (R_GS=20k) Gate-source voltage		V_DSS V_DGR V_GSS	-200 -200 ±20	V V V
Drain current	DC (Note 1)	I_D	-2.5	A
Drain current	Pulse (Note 1)	I_DP	-10	A
Drain power dissipation (Tc=25) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range		P_D E_AS I_AR E_AR Tch T_stg	20 97.5 -2.5 2.0 150 -55~150	W mJ A mJ

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept an Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SJ680

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