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Application4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.)High forward transfer admittance: |Yfs| = 5.0 S (typ.)Low leakage current: IDSS = −100 A (max) (VDS = −60 V)Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)Specifica...

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SeekIC No. : 004225371 Detail

2SJ669: Application4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.)High forward transfer admittance: |Yfs| = 5.0 S (typ.)Low leakage current: IDSS = −100 A (max) (VDS = −60...

2SJ669 Data Sheet

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Part Number:: 2SJ669
Supply Ability:: 5000

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Upload time: 2025/2/15

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Recent History
What is this?

2SJ600 evaluate
Features: • Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)RDS(on)2 = 7...
2SJ601 evaluate
Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 4...
2SJ602 evaluate
Features: • Super low on-state resistance:RDS(on)1 = 73 m MAX. (VGS = −10 V, ID = W...

Product Details

Description

Application

4-V gate drive
Low drain-source ON-resistance: R_{DS (ON)} = 0.12 (typ.)
High forward transfer admittance: |Y_fs| = 5.0 S (typ.)
Low leakage current: I_DSS = −100 A (max) (V_DS = −60 V)
Enhancement mode: V_th = −0.8 to −2.0 V
(V_DS = −10 V, I_D= −1 mA)

Specifications

Characteristics		Symbol	Ratings	Unit
Drain-source voltage		V_DSS	−60	V
Drain-gate voltage (R_GS=20 k)		V_DGR	−60	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC(Note 1)	I_D	−5	A
Drain current	Pulse (Note 1)	I_DP	−20	A
Drain power dissipation		P_D	1.2	W
Single-pulse avalanche energy (Note2)		E_AS	40.5	mJ
Avalanche current		I_AR	−5	A
Repetitive avalanche energy (Note 3)		E_AR	0.12	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling ecautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SJ669

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