MOSFET POWER MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 18 A | ||
Resistance Drain-Source RDS (on) : | 58 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220ML | Packaging : | Bulk |
Parameter | Symbol | Conditions | Ratings | Unit |
Drain-to-Source Voltage | VDSS | -100 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current (DC) | ID | -18 | A | |
Drain Current (Pulse) | IDP | PW10ms, duty cycle1% | -72 | A |
Allowable Power Dissipation | PD | 2.0 | W | |
Tc=25°C | 30 | W | ||
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C |
Absolute maximum ratings | |
---|---|
VDSS [V] | 100 |
VGSS [V] | 20 |
ID [A] | 18 |
PD [W] | 30
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=9 |
0.058 |
RDS(on) typ [] VGS=4V ID [A]=9 |
0.074 |
VGS(off) min [V] | 1.2 |
VGS(off) max [V] | 2.6 |
|yfs| typ [S] | 20 |
Ciss typ [pF] | 4200 |
Qg typ [nC] | 74 |