MOSFET POWER MOSFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 28 A | ||
Resistance Drain-Source RDS (on) : | 28.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220ML | Packaging : | Bulk |
Parameter | Symbol | Conditions | Ratings | Unit |
Drain-to-Source Voltage | VDSS | --60 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current (DC) | ID | -28 | A | |
Drain Current (Pulse) | IDP | PW10ms, duty cycle1% | -112 | A |
Allowable Power Dissipation | PD | 2.0 | W | |
Tc=25 | 30 | W | ||
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | -55 to +150 |
Absolute maximum ratings | |
---|---|
VDSS [V] | 60 |
VGSS [V] | 20 |
ID [A] | 28 |
PD [W] | 30
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=14 |
0.0285 |
RDS(on) typ [] VGS=4V ID [A]=14 |
0.039 |
VGS(off) min [V] | 1.2 |
VGS(off) max [V] | 2.6 |
|yfs| typ [S] | 26 |
Ciss typ [pF] | 4360 |
Qg typ [nC] | 80 |