MOSFET P-CH 60V 20A TO-220ML
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Series: | - | Manufacturer: | SANYO Semiconductor (U.S.A) Corporation | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Logic Level Gate | ||
Drain to Source Voltage (Vdss): | 60V | Continuous Drain Current : | 2.1 A | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 20A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 10A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | - | Gate Charge (Qg) @ Vgs: | 45nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2200pF @ 20V | ||
Power - Max: | 2W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220ML |
Absolute maximum ratings | |
---|---|
VDSS [V] | 60 |
VGSS [V] | 20 |
ID [A] | 20 |
PD [W] | 25
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=10 |
0.045 |
RDS(on) typ [] VGS=4V ID [A]=10 |
0.065 |
VGS(off) min [V] | 1.2 |
VGS(off) max [V] | 2.6 |
|yfs| typ [S] | 17 |
Ciss typ [pF] | 2200 |
Qg typ [nC] | 45 |