2SJ650

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 21nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 12A
Power - Max: 2W
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) @ Vds: 1020pF @ 20V
Rds On (Max) @ Id, Vgs: 135 mOhm @ 6A, 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220ML


Pinout




Specifications

Absolute maximum ratings
VDSS [V]	60
VGSS [V]	20
ID [A]	12
PD [W]	20 Tc=25°C

Electrical characteristics
RDS(on) typ [Ω] VGS=10V ID [A]=6	0.1
RDS(on) typ [Ω] VGS=4V ID [A]=6	0.145
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	10
Ciss typ [pF]	1020
Qg typ [nC]	21