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2SJ649

Features: • Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 75 mΩ MAX. (VGS = 4.0 V, ID = 10 A)• Low input capacitance:Ciss = 1900 pF TYP. (VDS = 10 V, VGS = 0 V)• Built-in gate protection diodeSpecifications Drain to Source Volt...

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2SJ649: Features: • Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 75 mΩ MAX. (VGS = 4.0 V, ID = 10 A)• Low input capacitance:Ciss = 1900 pF TYP. (...

2SJ649 Data Sheet

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Part Number:
2SJ649
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance:
  RDS(on)1 = 48 mΩ MAX. (VGS = 10 V, ID = 10 A)
  RDS(on)2 = 75 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
• Low input capacitance: 
  Ciss = 1900 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC) (TC = 25)

Drain Current (pulse) Note1

Total Power Dissipation (TC = 25)

Total Power Dissipation (TA = 25)

Channel Temperature

Storage Temperature

Single Avalanche Current Note2

Single Avalanche Energy Note2		 VDSS

VGSS

ID(DC)

ID(pulse)

PT

PT

Tch

Tstg

IAS

EAS		 60

+ 20

+20

+ 70

25

2.0

150

55 to +150

20

40		 V

V

A

A

W

W





A

mJ



Description

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.


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