2SJ620 Selling Leads, Price trend, 2SJ620 DataSheet download, circuit diagram from SeekIC.com

Features: ` 4-V gate drive` Low drain-source ON resistance: RDS (ON) = 63 m (typ.)` High forward transfer admittance: |Yfs| = 15 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS = −100 V)` Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)S...

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SeekIC No. : 004225337 Detail

2SJ620: Features: ` 4-V gate drive` Low drain-source ON resistance: RDS (ON) = 63 m (typ.)` High forward transfer admittance: |Yfs| = 15 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS = ͨ...

2SJ620 Data Sheet

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Part Number:: 2SJ620
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Recent History
What is this?

2SJ600 evaluate
Features: • Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)RDS(on)2 = 7...
2SJ601 evaluate
Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 4...
2SJ602 evaluate
Features: • Super low on-state resistance:RDS(on)1 = 73 m MAX. (VGS = −10 V, ID = W...

Product Details

Description

Features:

` 4-V gate drive
` Low drain-source ON resistance: RDS (ON) = 63 m (typ.)
` High forward transfer admittance: |Yfs| = 15 S (typ.)
` Low leakage current: IDSS = −100 A (max) (VDS = −100 V)
` Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	-100	V
Drain-gate voltage (RGS = 20 k)		V_GDR	-100	V
Gate-source voltage		I_D	±20	V
Drain current	DC (Note 1)	I_DP	-18	A
Drain current	Pulse (Note 1)	P_D	-72	A
Drain power dissipation (Tc = 25°C)		E_AS	125	W
Single pulse avalanche energy (Note 2)		I_AR	937	mJ
Avalanche current		I_AR	-18	A
Repetitive avalanche energy (Note 3)		E_AR	12.5	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	-55 to150

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2SJ620

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